Product Description
MZ-V8V250BW | SAMSUNG | 980 SERIES 250GB TRIPLE-LEVEL CELL PCI EXPRESS 3.0 X4 NVME M.2 2280 SOLID STATE DRIVEProduct Videos
Custom Field
Form Factor M.2 2280
Capacity 250 GB
Flash Memory Technology Triple Level Cell (TLC)
Random Read IOPS 230000
Random Write IOPS 320000
MTBF 1500000 Hour(s)
Drive Interface Type PCI Express 3.0 x4