Product Description
MZ-V8V1T0BW | SAMSUNG | 980 SERIES 1TB TRIPLE-LEVEL CELL PCI EXPRESS 3.0 X4 NVME M.2 2280 SOLID STATE DRIVEProduct Videos
Custom Field
Form Factor M.2 2280
Capacity 1 TB
Flash Memory Technology Triple Level Cell (TLC)
Random Read IOPS 500000
Random Write IOPS 480000
MTBF 1500000 Hour(s)
Drive Interface Type PCI Express 3.0 x4