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  • M474A1G43EB1-CTD | Samsung | 8Gb Ddr4-2666Mhz Pc4-21300 Ecc Unbuffered Cl19 260-Pin Sodimm 1.2V Dual Rank Memory Module
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    M474A1G43EB1-CTD | Samsung | 8Gb Ddr4-2666Mhz Pc4-21300 Ecc Unbuffered Cl19 260-Pin Sodimm 1.2V Dual Rank Memory Module

    SAMSUNG

    Price $151.86
    $126.55
    (You save $25.31 )
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    SKU:
    M474A1G43EB1-CTD
    Availability:
    In Stock
    Shipping:
    Calculated at Checkout
    Memory Type:
    SODIMM
    Capacity:
    8GB
    Data Transfer Rate:
    2666MHz
    Pins:
    260 Pin
    Bus Type:
    PC-21300
    Error Correction:
    ECC
    Cycle Time:
    0.75ns
    Cas:
    CL19
    Rank:
    Rank 2
    Voltage:
    1.2

    Product Description

    M474A1G43EB1-CTD | Samsung | 8Gb Ddr4-2666Mhz Pc4-21300 Ecc Unbuffered Cl19 260-Pin Sodimm 1.2V Dual Rank Memory Module

    Product Videos

    Custom Field

    Memory Type SODIMM
    Capacity 8GB
    Data Transfer Rate 2666MHz
    Pins 260 Pin
    Bus Type PC-21300
    Error Correction ECC
    Cycle Time 0.75ns
    Cas CL19
    Rank Rank 2
    Voltage 1.2

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    M474A1G43EB1-CTD | Samsung | 8Gb Ddr4-2666Mhz Pc4-21300 Ecc Unbuffered Cl19 260-Pin Sodimm 1.2V Dual Rank Memory Module

    M474A1G43EB1-CTD | Samsung | 8Gb Ddr4-2666Mhz Pc4-21300 Ecc Unbuffered Cl19 260-Pin Sodimm 1.2V Dual Rank Memory Module

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